Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
Identifieur interne : 001770 ( Chine/Analysis ); précédent : 001769; suivant : 001771Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
Auteurs : RBID : Pascal:06-0017816Descripteurs français
- Pascal (Inist)
- Propriété optique, Alliage, Gallium arséniure, Puits quantique, Epitaxie jet moléculaire, Puits quantique multiple, Photoluminescence, Mécanisme croissance, Température, Largeur raie, Bande interdite, Cristal, Superréseau, Croissance cristalline, Composé minéral, Semiconducteur, Gallium phosphure, Indium phosphure, GaAs, InGaP, 4255P, 78.
- Wicri :
- concept : Alliage, Composé minéral.
English descriptors
- KwdEn :
- Alloys, Crystal growth, Crystals, Energy gap, Gallium arsenides, Gallium phosphides, Growth mechanism, Indium phosphides, Inorganic compounds, Line widths, Molecular beam epitaxy, Multiple quantum well, Optical properties, Photoluminescence, Quantum wells, Semiconductor materials, Superlattices, Temperature.
Abstract
Optical properties of digital-alloy InGaAlP and InGaP/InGaAlP multiple-quantum wells (MQWs) grown by molecular beam epitaxy were characterized by 300 and 10 K-photoluminescence (PL). For digital-alloy In0.49 (Ga1-zAlz)0.51P grown at425°C with z = 0.2, 0.4, and 0.5, the energies of PL peak were in the range 2.0-2.167 eV. As the growth temperature increased from 425 to 470 °C for the digital-alloy In0.49(Ga0.6Al0.4)0.51P, the intensity of PL peak increased 2.5 times. However, the energy and line width of PL spectrum did not change significantly. The L peak at 2.148 eV and the H peak at 2.189 eV from 8 K-PL were also observed and the intensity ratios of L peak to H peak (IL/ IH) were 0.046, 0.048, and 0.043 for 425, 450, and 475 °C, respectively. For the digital-alloy InGaP/InGaAlP MQW structure grown at 450 °C, PL peak energy of 1.911 eV and PL line width of 38 meV were obtained successfully. The band gap and compositions of InGaAlP were easily controlled by digital-alloy technique without degrading the crystal quality.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of digital-alloy In<sub>0.49</sub>(Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P/GaAs and InGaP/In<sub>0.49</sub>(Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P multi-quantum wells grown by molecular-beam epitaxy</title><author><name sortKey="Kim, J M" uniqKey="Kim J">J. M. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong</s1><s2>Buk-gu, Gwangju 500-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Buk-gu, Gwangju 500-712</wicri:noRegion></affiliation></author><author><name sortKey="Park, C Y" uniqKey="Park C">C. Y. Park</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong</s1><s2>Buk-gu, Gwangju 500-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Buk-gu, Gwangju 500-712</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Y T" uniqKey="Lee Y">Y. T. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong</s1><s2>Buk-gu, Gwangju 500-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Buk-gu, Gwangju 500-712</wicri:noRegion></affiliation></author><author><name sortKey="Song, J D" uniqKey="Song J">J. D. Song</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nano-device Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong</s1><s2>Seongbuk-gu, Seoul 136-791</s2><s3>CHN</s3><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Seongbuk-gu, Seoul 136-791</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0017816</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 06-0017816 INIST</idno><idno type="RBID">Pascal:06-0017816</idno><idno type="wicri:Area/Main/Corpus">009938</idno><idno type="wicri:Area/Main/Repository">009816</idno><idno type="wicri:Area/Chine/Extraction">001770</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloys</term><term>Crystal growth</term><term>Crystals</term><term>Energy gap</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Growth mechanism</term><term>Indium phosphides</term><term>Inorganic compounds</term><term>Line widths</term><term>Molecular beam epitaxy</term><term>Multiple quantum well</term><term>Optical properties</term><term>Photoluminescence</term><term>Quantum wells</term><term>Semiconductor materials</term><term>Superlattices</term><term>Temperature</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term><term>Alliage</term><term>Gallium arséniure</term><term>Puits quantique</term><term>Epitaxie jet moléculaire</term><term>Puits quantique multiple</term><term>Photoluminescence</term><term>Mécanisme croissance</term><term>Température</term><term>Largeur raie</term><term>Bande interdite</term><term>Cristal</term><term>Superréseau</term><term>Croissance cristalline</term><term>Composé minéral</term><term>Semiconducteur</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>GaAs</term><term>InGaP</term><term>4255P</term><term>78</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Alliage</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical properties of digital-alloy InGaAlP and InGaP/InGaAlP multiple-quantum wells (MQWs) grown by molecular beam epitaxy were characterized by 300 and 10 K-photoluminescence (PL). For digital-alloy In<sub>0.49</sub> (Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P grown at425°C with z = 0.2, 0.4, and 0.5, the energies of PL peak were in the range 2.0-2.167 eV. As the growth temperature increased from 425 to 470 °C for the digital-alloy In<sub>0.49</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.51</sub>P, the intensity of PL peak increased 2.5 times. However, the energy and line width of PL spectrum did not change significantly. The L peak at 2.148 eV and the H peak at 2.189 eV from 8 K-PL were also observed and the intensity ratios of L peak to H peak (I<sub>L</sub>/ I<sub>H</sub>) were 0.046, 0.048, and 0.043 for 425, 450, and 475 °C, respectively. For the digital-alloy InGaP/InGaAlP MQW structure grown at 450 °C, PL peak energy of 1.911 eV and PL line width of 38 meV were obtained successfully. The band gap and compositions of InGaAlP were easily controlled by digital-alloy technique without degrading the crystal quality.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>284</s2></fA05><fA06><s2>3-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of digital-alloy In<sub>0.49</sub>(Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P/GaAs and InGaP/In<sub>0.49</sub>(Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P multi-quantum wells grown by molecular-beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (J. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>PARK (C. Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (Y. T.)</s1></fA11><fA11 i1="04" i2="1"><s1>SONG (J. D.)</s1></fA11><fA14 i1="01"><s1>Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong</s1><s2>Buk-gu, Gwangju 500-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Nano-device Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong</s1><s2>Seongbuk-gu, Seoul 136-791</s2><s3>CHN</s3><sZ>4 aut.</sZ></fA14><fA20><s1>335-340</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000135612960060</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0017816</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical properties of digital-alloy InGaAlP and InGaP/InGaAlP multiple-quantum wells (MQWs) grown by molecular beam epitaxy were characterized by 300 and 10 K-photoluminescence (PL). For digital-alloy In<sub>0.49</sub> (Ga<sub>1-z</sub>Al<sub>z</sub>)<sub>0.51</sub>P grown at425°C with z = 0.2, 0.4, and 0.5, the energies of PL peak were in the range 2.0-2.167 eV. As the growth temperature increased from 425 to 470 °C for the digital-alloy In<sub>0.49</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.51</sub>P, the intensity of PL peak increased 2.5 times. However, the energy and line width of PL spectrum did not change significantly. The L peak at 2.148 eV and the H peak at 2.189 eV from 8 K-PL were also observed and the intensity ratios of L peak to H peak (I<sub>L</sub>/ I<sub>H</sub>) were 0.046, 0.048, and 0.043 for 425, 450, and 475 °C, respectively. For the digital-alloy InGaP/InGaAlP MQW structure grown at 450 °C, PL peak energy of 1.911 eV and PL line width of 38 meV were obtained successfully. The band gap and compositions of InGaAlP were easily controlled by digital-alloy technique without degrading the crystal quality.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Alliage</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Alloys</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Puits quantique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Quantum wells</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Température</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Temperature</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Largeur raie</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Line widths</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Bande interdite</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Energy gap</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cristal</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Crystals</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Superréseau</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Superlattices</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Crystal growth</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Composé minéral</s0><s5>20</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>20</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>21</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>21</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>51</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InGaP</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>78</s0><s4>INC</s4><s5>54</s5></fC03><fN21><s1>002</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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